high current transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 80 vdc collectorbase voltage v cbo 80 vdc emitterbase voltage v ebo 5.0 vdc collector current e continuous i c 0.5 adc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watt mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (1) (i c = 10 madc, i b = 0) v (br)ceo 80 e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 80 e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 e e vdc collector cutoff current (v cb = 60 vdc, i e = 0) i cbo e e 100 nadc on characteristics* dc current gain (i c = 10 madc, v ce = 2.0 vdc) (i c = 100 madc, v ce = 2.0 vdc) bc489 bc489a bc489b (i c = 1.0 adc, v ce = 5.0 vdc)* h fe 40 60 100 160 15 e e 160 260 e e 400 250 400 e e 1. pulse test: pulse width = 300 s, duty cycle 2%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: bc489/d bc489, a, b case 2904, style 17 to92 (to226aa) 1 2 3 collector 1 2 base 3 emitter
bc489, a, b http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics* (continued) collectoremitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) v ce(sat) e e 0.2 0.3 0.5 e vdc baseemitter saturation voltage (i c = 500 madc, i b = 50 madc) (i c = 1.0 adc, i b = 100 madc) (1) v be(sat) e e 0.85 0.9 1.2 e vdc dynamic characteristics currentgain e bandwidth product (i c = 50 madc, v ce = 2.0 vdc, f = 100 mhz) f t e 200 e mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob e 7.0 e pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ib e 50 e pf 1. pulse test: pulse width = 300 s, duty cycle 2.0%. figure 1. switching time test circuits *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities 5.0 m s +10 v 0 v in 5.0 m f 100 100 turn-on time -1.0 v v cc +40 v r l output *c s < 6.0 pf t r = 3.0 ns 5.0 m s v in 5.0 m f 100 100 turn-off time +v bb v cc +40 v r l output *c s < 6.0 pf t r = 3.0 ns r b r b
bc489, a, b http://onsemi.com 3 figure 2. currentgain e bandwidth product i c , collector current (ma) 200 70 50 30 20 10 7.0 5.0 3.0 2.0 300 200 100 70 50 30 v ce = 2.0 v t j = 25 c f, current-gain bandwidth product (mhz) t c, capacitance (pf) t, time (ns) figure 3. capacitance v r , reverse voltage (volts) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 80 60 40 20 10 4.0 t j = 25 c c obo c ibo 8.0 figure 4. switching time i c , collector current (ma) 500 50 30 20 10 7.0 5.0 1.0 k v cc = 40 v i c /i b = 10 i b1 = i b2 t j = 25 c 700 500 300 200 100 70 50 30 20 10 t s t f t r t d @ v be(off) = 0.5 v 100 6.0 200 100 70 300 figure 5. thermal response t, time (ms) 1.0 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an469) t j(pk) t c = p (pk) z q jc(t) t j(pk) t a = p (pk) z q ja(t) t 1 t 2 p (pk) z q jc(t) = r(t) ? r q jc z q ja(t) = r(t) ? r q ja single pulse
bc489, a, b http://onsemi.com 4 v ce , collector-emitter voltage (volts) 1.0 k 1.0 i c , collector current (ma) 2.0 5.0 figure 6. active region e safe operating area current limit thermal limit second breakdown limit 700 500 300 200 100 70 50 30 20 10 3.0 10 20 50 30 7.0 70 100 bc489 100 m s 1.0 ms 1.0 s t c = 25 c t a = 25 c figure 7. dc current gain i c , collector current (ma) 400 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 200 100 80 60 40 h fe , dc current gain t j =125 c 25 c -55 c v ce = 1.0 v 300 500 i c , collector current (ma) figure 8. aono voltages v, voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 200 20 t j = 25 c v be(on) @ v ce = 1.0 v v ce(sat) @ i c /i b = 10 5.0 10 50 100 v be(sat) @ i c /i b = 10 i c , collector current (ma) figure 9. collector saturation region v ce , collector-emitter voltage (volts ) 1.0 0.8 0.6 0.4 0.2 0 0.1 10 1.0 t j = 25 c i c = 10 ma 0.05 0.2 0.5 2.0 5.0 20 100 ma 250 ma 50 ma 2.0 500 50 500 ma
bc489, a, b http://onsemi.com 5 i c , collector current (ma) figure 10. baseemitter temperature coefficient -0.8 -2.8 1.0 100 10 r q vb for v be 0.5 2.0 5.0 20 50 200 -1.2 -1.6 -2.0 -2.4 r vb , temperature coefficient (mv/ c) q 500 i c , collector current (ma) figure 11. aono voltages v, voltage (volts) -1.0 -0.8 -0.6 -0.4 -0.2 0 t j = 25 c v be(on) @ v ce = -1.0 v v ce(sat) @ i c /i b = 10 -0.5 v be(sat) @ i c /i b = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 i b , base current (ma) figure 12. collector saturation region v ce , collector-emitter voltage (volts) -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.1 -10 -1.0 t j = 25 c i c = -10 ma -0.05 -0.2 -0.5 -2.0 -5.0 -20 -50 ma -50 -100 ma -250 ma -500 ma i c , collector current (ma) figure 13. baseemitter temperature coefficient -0.8 -2.8 -1.0 -100 -10 r q vb for v be -0.5 -2.0 -5.0 -20 -50 -200 -1.2 -1.6 -2.0 -2.4 r vb , temperature coefficient (mv/ c) q -500
bc489, a, b http://onsemi.com 6 package dimensions case 02904 (to226aa) issue ad c r n n 1 j section xx d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- style 17: pin 1. collector 2. base 3. emitter
bc489, a, b http://onsemi.com 7 notes
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